Gallium Nitride (GaN)

New GaN-based devices developed by onsemi, from controllers to amplifiers, have their sights set on the data center, consumer, automotive, and industrial sectors.

Cambridge GaN Devices launched the ICeGaN P2 series of power ICs with on-resistance levels as low as 25 mΩ.

Navitas’ Llew Vaughan-Edmunds talks with Inside Electronics about the company’s GaN-based power advances targeting a range of application areas.

EPC's portfolio of GaN-based power-conversion solutions, built to deliver high efficiency and reliability, were on display at PCIM Europe.

Infineon's 8-kW reference design for data centers features Si, SiC, and GaN technologies to help quench AI’s thirst for power.

What’s inside a new family of GaN power FETs that Cambridge GaN Devices contends can be driven like a silicon MOSFET?

GaN semiconductors enhance power density and efficiency in automotive systems for on-board chargers (OBCs), high-voltage DC-DC converters, and electric-vehicle charging stations...

Gallium nitride is becoming the technology of choice for charging EVs, HEVs, and other applications, bringing 3X greater speed when compared to silicon-based solutions.

We take a look inside Analog Devices' first gate-driver IC specifically designed for GaN power switches.

Navitas Semiconductor’s GaN solutions isolate the GaN transistor for a more robust power-supply solution.

Sponsored by Texas Instruments: Gallium-nitride FETs deliver greater power density, lower on-state resistance, and higher efficiency than their silicon-based counterparts for ...

Issues with motors range from power consumption to thermal management to the EMI of the variable-frequency drivers and their cables. Advanced GaN-based drivers come to the rescue...

The Briefing: Can traditional power electronics satisfy the rising power demands of AI chips in data centers?

This article presents a comparative study of the parametric recovery and shift of three mainstream GaN HEMTs experiencing repetitive overvoltage switching close to their dynamic...

Allegro MicroSystems is upgrading its gate drivers to better harness the high switching speeds of GaN.

Thermal management can make or break 5G base stations. According to NXP, top-side cooling can help prevent them from overheating.

A patent lawsuit is highlighting the importance of wide-bandgap semiconductors in the latest technology revolution.

Keysight's solution measures wide-bandgap power semiconductor dynamic characteristics for discrete devices and power modules, including characteristics like turn-on, turn-off,...

GaN-based FETs and ICs enable higher efficiency, smaller size and weight, and lower cost in demanding power circuits.

GaN is dominating in chargers and adapters for smartphones and laptops. In this latest installment of "The Briefing," we review its progress at even higher power levels.

At PCIM, GaN Systems CEO Jim Witham discusses high power density of GaN devices in automotive, data-center, and audio applications.

TI is highlighting its new 650-V GaN half-bridge IC for power adapters at APEC 2023.

Infineon is seeking to expand its power electronics ecosystem through an acquisition of rival GaN Systems.

Anker's new generation of mobile fast chargers marks another major win for gallium-nitride power devices.

Sponsored by Texas Instruments: Reliable GaN devices are emerging as alternatives to silicon MOSFETs and IGBTs for designs requiring high power density and energy efficiency.

GaN FETs maximize power density, enabling a whole new world of higher efficiency with smaller, more reliable, higher-efficiency power-management solutions—even in the RF space...

The device, developed by Texas Instruments, is said to double power density and boost efficiency in automotive onboard chargers

GaN is now playing a dominant role in power electronics.

Gallium nitride transistors have emerged as a high-performance alternative to silicon-based transistors, thanks to the technology's ability to be made allow smaller device...